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  r07ds0889ej0100 rev.1.00 page 1 of 7 oct 29, 2012 preliminary datasheet bcr20fm-12lb 600v - 20a - triac medium power use features ? i t (rms) : 20 a ? v drm : 600 v ? tj: 150 c ? i fgti , i rgti , i rgtiii : 30 ma (20ma) note5 ? insulated type ? planar passivation type ? viso : 2000 v outline 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal renesas package code: prss0003ag-a (package name: to-220fp) 1 2 3 applications switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications. maximum ratings voltage class parameter symbol 12 unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v parameter symbol ratings unit conditions rms on-state current i t (rms) 20 a commercial frequency, sine full wave 360? conduction, tc = 104 ?c surge on-state current i tsm 200 a 60 hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 167 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ?40 to +150 ?c storage temperature tstg ?40 to +150 ?c mass ? 1.9 g typical value isolation voltage note6 viso 2000 v ta = 25 ?c, ac 1 minute t 1 ? t 2 ? g terminal to case r07ds0889ej0100 rev.1.00 oct 29, 2012
bcr20fm-12lb preliminary r07ds0889ej0100 rev.1.00 page 2 of 7 oct 29, 2012 electrical characteristics rated value parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 3.0 ma tj = 150 ?c, v drm applied on-state voltage v tm ? ? 1.5 v tc = 25 ?c, i tm = 30a, instantaneous measurement ? v fgt ? ? ? 1.5 v ?? v rgt ? ? ? 1.5 v gate trigger voltage note2 ??? v rgt ??? ? ? 1.5 v tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? ? i fgt ? ? ? 30 note5 ma ?? i rgt ? ? ? 30 note5 ma gate trigger curent note2 ??? i rgt ??? ? ? 30 note5 ma tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? 0.2 ? ? tj = 125 ?c, v d = 1/2 v drm gate non-trigger voltage v gd 0.1 ? ? v tj = 150 ?c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 2.3 ? c/w junction to case note3 10 ? ? tj = 125 ?c critical-rate of rise of off-state commutation voltage note4 (dv/dt)c 1 ? ? v/ ? s tj = 150 ?c notes: 1. gate open. 2. measurement using the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 ?c/w. 4. test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. high sensitivity (i gt ? 20 ma) is also available. (i gt item: 1) 6. make sure that your finished product containing this device meets your safe isolation requirements. for safety, it's advisable that heatsink is electrically floating. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125/150 ?c 2. rate of decay of on-state commutating current (di/dt)c = ?10a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr20fm-12lb preliminary r07ds0889ej0100 rev.1.00 page 3 of 7 oct 29, 2012 performance curves 10 2 10 3 10 4 10 ?1 10 0 10 1 10 2 0 0.4 1.2 1.6 2.4 2.0 0.8 10 2 10 3 10 1 ?40 0 40 80 120 160 typical example 10 2 10 3 10 1 ?40 0 40 80 120 160 typical example 10 1 10 ?1 10 0 10 1 10 2 10 3 10 4 10 0 10 1 10 2 0 maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 4 0123 10 3 10 2 10 1 10 0 tj = 25c tj = 150c 160 80 120 40 200 240 v gm = 10v p gm = 5w v gt = 1.5v p g(av) = 0.5w i gm = 2a i fgt i , i rgt i , i rgt iii i fgt i i rgt i i rgt iii
bcr20fm-12lb preliminary r07ds0889ej0100 rev.1.00 page 4 of 7 oct 29, 2012 0 5 10 15 20 25 30 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current 03 2 14 5 0 20 40 80 60 100 120 140 160 ?40 0 40 80 120 160 ?40 0 40 80 120 160 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example typical example 01 02 03 0 0 20 40 80 60 100 120 140 160 curves apply regardless of conduction angle 360 conduction resistive, inductive loads 0 20 40 80 60 100 120 140 160 160 160 t2.3 120 120 t2.3 100 100 t2.3 curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased 10 6 10 5 10 4 10 3 10 2 10 3 10 2 10 1 30 20 10 40 0 0 5 10 15 20 25 30 360 conduction resistive, inductive loads
bcr20fm-12lb preliminary r07ds0889ej0100 rev.1.00 page 5 of 7 oct 29, 2012 10 1 33 0 1 0 2 10 1 10 2 10 3 10 4 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/s) breakover voltage (dv/dt = 1v/s) 100 (%) b reakover vol tage vs. rate of r i se of off- state vol tage ( t j = 125c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/s) breakover voltage (dv/dt = 1v/s) 100 (%) b reakover vol tage vs. rate of r i se of off- state vol tage ( t j = 150c ) breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 0 20 40 80 60 100 120 140 160 0 20 40 80 60 100 120 160 140 0 20 40 80 60 100 120 160 140 typical example typical example tj = 125c iii quadrant i quadrant typical example tj = 150c iii quadrant i quadrant 10 2 10 3 10 0 10 1 10 2 10 1 33 0 1 0 2 10 3 10 4 10 1 ?400 4 0 80 120 160 ?400 4 0 80 120 160 distribution t 2 + , g ? typical example commutation characteristics (tj=125c) critical rate of rise of off-state commutating voltage (v/s) rate of decay of on-state commutating current (a/ms) commutation characteristics (tj=150c) critical rate of rise of off-state commutating voltage (v/s) rate of decay of on-state commutating current (a/ms) 10 1 10 2 10 0 10 1 10 2 10 0 i quadrant mai n vol tage mai n current i t (di/dt)c v d time time (dv/ dt)c t ypi cal exampl e t j = 150c i t = 4a = 500 s v d = 200v f = 3 h z i quadrant iii quadrant m i n i mum characteri sti cs val ue mai n vol tage mai n current i t (di/dt)c v d time time (dv/ dt)c t ypi cal exampl e t j = 125c i t = 4a = 500 s v d = 200v f = 3 h z m i n i mum characteri sti cs val ue iii quadrant t 2 + , g + t 2 ? , g ? typical example
bcr20fm-12lb preliminary r07ds0889ej0100 rev.1.00 page 6 of 7 oct 29, 2012 10 3 10 2 10 1 10 1 10 0 10 2 gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width (s) gate trigger current vs. gate current pulse width typical example c 1 = 0.1 to 0.47f r 1 = 47 to 100 c 0 = 0.1f r 0 = 100 gate trigger characteristics test circuits recommended circuit values around the triac test procedure i test procedure iii test procedure ii 6 6 6 6v 6v 6v 330 330 330 a v a v a v c 1 c 0 r 0 r 1 i rgt i i rgt iii i fgt i load
bcr20fm-12lb preliminary r07ds0889ej0100 rev.1.00 page 7 of 7 oct 29, 2012 package dimensions 5.08 0.20 3.18 0.20 6.68 0.20 ?? 3.18 0.10 0.80 0.20 1.28 0.30 2.76 0.20 4.7 0.2 0.50 2.54 0.20 max 1.47 3.3 0.2 15.87 0.20 12.98 0.30 10.16 0.20 unit: mm ? 1.9 g m ass[t y p. ] ? pr ss0003 a g - a r ene s a s code jeita packa g e cod e pr e vi ous code packa g e nam e t o -22 0 f p ordering information orderable part number packing quantity remark bcr20fm-12lb#bb0 tube 50 pcs. straight type bcr20fm-12lb-1#bb0 tube 50 pcs. straight type, i gt item:1 bcr20fm-12lba8#bb0 tube 50 pcs. a8 lead form bcr20fm12lb1a8#bb0 tube 50 pcs. a8 lead form, i gt item:1 note: please confirm the specificati on about the shipping in detail.
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. 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